(In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
技术优势
• Improved performance of existing devices which require a combination of layers with large lattice mismatch • Mitigation of defect formation in active layers • Increase the thickness of the active layers
技术应用
• LEDs • Solar Cells This technology is available for licensing.
详细技术说明
Researchers at the University of California, Santa Barbara have developed a novel invention to enable the fabrication of (In,Ga,Al)N optoelectronic devices with thick active layers containing a high concentration of indium (In). The In content of the active region can be increased while maintaining a low lattice mismatch between the active region and the current carrying layers, mitigating deterioration of device performance in the green gap. Consequently, relaxed (In,Ga,Al)N films with a lattice constant between GaN and InN can be fabricated on GaN layers of all orientations, including (0001) c-plane GaN.
附加资料
Patent Number: US20140131730A1 Application Number: US14073698A Inventor: Keller, Stacia | Neufeld, Carl J. | Mishra, Umesh K. | DenBaars, Steven P. Priority Date: 13 Jan 2012 Priority Number: US20140131730A1 Application Date: 6 Nov 2013 Publication Date: 15 May 2014 IPC Current: H01L003300 | H01L003332 US Class: 257076 | 438047 Assignee Applicant: The Regents of the University of California Title: (IN,GA,AL)N OPTOELECTRONIC DEVICES GROWN ON RELAXED (IN,GA,AL)N-ON-GAN BASE LAYERS Usefulness: (IN,GA,AL)N OPTOELECTRONIC DEVICES GROWN ON RELAXED (IN,GA,AL)N-ON-GAN BASE LAYERS Summary: The method is useful for fabricating a heterostructure device (claimed), optoelectronic devices, relaxed indium gallium nitride films, electronic devices including transistors, and non-polar/semi-polar III-nitride optoelectronic and electronic devices including LEDs, and solar cells. Novelty: Fabricating heterostructure device, comprises obtaining first layer or substrate, growing second layer on first layer or substrate, and forming second layer that is partially relaxed, where the first and second layers form heterojunction
主要类别
环保/绿色科技
细分类别
太阳能电池
申请号码
9076927
其他
Background
Currently, the fabrication of heterojunctions for optoelectronic devices is limited to the combination of layers with either the same lattice constants or layers where the thickness of the lattice mismatched layers did not exceed its critical thickness. However, thick active regions are attractive for light emitting diodes (LEDs) with significantly reduced droop and solar cells requiring thick active regions for efficient absorption. Moreover, LED development is restricted by the green gap due to deep green LED sources being difficult to produce.