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Organic Electrical Bistable Devices Fabricated by Solution Processing


技术优势

Available to low cost and simple manufacturing processesCompatible with many device architecturesHigh device densityLow production cost


技术应用

Data storageOptical devicesSwitching elements


详细技术说明

Researchers at UCLA have developed a new series of composite materials that can be used as non-volatile electronic memory devices that exhibit bistable behavior. In general, the materials are composed of a dielectric matrix material containing an organic polymer and/or an inorganic oxide, collectively which acts as an electron donor and an electron acceptor. Electronic memory and switching devices manufactured from these films can be produced more easily and inexpensively and have reduced power and thermal requirements enabling stacking in various configurations to fabricate electronic devices of higher density.


附加资料

Patent Number: US7274035B2
Application Number: US2004927174A
Inventor: Yang, Yang | Ouyang, Jianyong | Szmanda, Charles R.
Priority Date: 3 Sep 2003
Priority Number: US7274035B2
Application Date: 25 Aug 2004
Publication Date: 25 Sep 2007
IPC Current: C08K000322 | H01L003100 | C08K000500 | C08L010100 | G11C001302 | H01L002131 | H01L00218247 | H01L002710 | H01L0027115 | H01L002728 | H01L005105
US Class: 257027 | 257E51027
Assignee Applicant: The Regents of the University of California
Title: Memory devices based on electric field programmable films
Usefulness: Memory devices based on electric field programmable films
Summary: Used for formation of an electric field programming film (claimed) that is utilized in a cross point array data storage device, stacked data storage device. Can also be used in an electronic memory, in device having flexible plastic substrate, inorganic oxide substrate, optical device, in switching unit for LED, in switching unit of other electronic device such as sensor, as actuation unit in micro-electro-mechanical system device and in control application of a microfluidic device.
Novelty: Electric field programming film formation composition for e.g. stacked data storage device, has electron donors and electron acceptors of type in amount effective to provide electric field programming


主要类别

化工/材料


细分类别

化工/材料应用


申请号码

7274035


其他

Background

The vast majority of electronic memory and switching devices are presently made from inorganic materials such as crystalline silicon. Although these devices have been technically and commercially successful, they have a number of drawbacks, including complex architecture and high fabrication costs. The incorporation of organic and polymeric materials can address some of these drawbacks, and allow for advanced functionality to be built into these devices, such as flexibility and transparency.

Additional Technologies by these Inventors


Tech ID/UC Case

21699/2003-194-0


Related Cases

2003-194-0


国家/地区

美国

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