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Organic Electrical Bistable Devices Fabricated by Solution Processing

技術優勢

Available to low cost and simple manufacturing processesCompatible with many device architecturesHigh device densityLow production cost

技術應用

Data storageOptical devicesSwitching elements

詳細技術說明

Researchers at UCLA have developed a new series of composite materials that can be used as non-volatile electronic memory devices that exhibit bistable behavior. In general, the materials are composed of a dielectric matrix material containing an organic polymer and/or an inorganic oxide, collectively which acts as an electron donor and an electron acceptor. Electronic memory and switching devices manufactured from these films can be produced more easily and inexpensively and have reduced power and thermal requirements enabling stacking in various configurations to fabricate electronic devices of higher density.

*Abstract

Scientists at UCLA have developed a composition of dielectric organic and inorganic materials that exhibit bistable electrical states and can be used in advanced electronic data storage and switching devices manufactured through low cost methods.

*Applications

• Data storage
• Optical devices
• Switching elements

*IP Issue Date

Sep 25, 2007

*Principal Investigation

Name: Jianyong Ouyang

Department:

Name: Charles Szmanda

Department:

Name: Yang Yang

Department:

附加資料

Patent Number: US7274035B2
Application Number: US2004927174A
Inventor: Yang, Yang | Ouyang, Jianyong | Szmanda, Charles R.
Priority Date: 3 Sep 2003
Priority Number: US7274035B2
Application Date: 25 Aug 2004
Publication Date: 25 Sep 2007
IPC Current: C08K000322 | H01L003100 | C08K000500 | C08L010100 | G11C001302 | H01L002131 | H01L00218247 | H01L002710 | H01L0027115 | H01L002728 | H01L005105
US Class: 257027 | 257E51027
Assignee Applicant: The Regents of the University of California
Title: Memory devices based on electric field programmable films
Usefulness: Memory devices based on electric field programmable films
Summary: Used for formation of an electric field programming film (claimed) that is utilized in a cross point array data storage device, stacked data storage device. Can also be used in an electronic memory, in device having flexible plastic substrate, inorganic oxide substrate, optical device, in switching unit for LED, in switching unit of other electronic device such as sensor, as actuation unit in micro-electro-mechanical system device and in control application of a microfluidic device.
Novelty: Electric field programming film formation composition for e.g. stacked data storage device, has electron donors and electron acceptors of type in amount effective to provide electric field programming

主要類別

化工/材料

細分類別

化工/材料應用

申請號碼

7274035

其他

Background

The vast majority of electronic memory and switching devices are presently made from inorganic materials such as crystalline silicon. Although these devices have been technically and commercially successful, they have a number of drawbacks, including complex architecture and high fabrication costs. The incorporation of organic and polymeric materials can address some of these drawbacks, and allow for advanced functionality to be built into these devices, such as flexibility and transparency.

Additional Technologies by these Inventors

• High-throughput Solution Processing of Large Scale Graphene for Device Applications
• Solution-Deposition of CIGS Solar Cell by Spray-Coating
• Three-Terminal Organic Memory Devices
• Bottom Insulating Gate Vertical Organic Transistor
• Rewritable Nano-Surface Organic Electrical Bistable Devices
• Organic Bistable Device and Organic Memory Cells
• Solution Synthesis and Deposition of Kesterite Copper Zinc Tin Chalcogenide Films
• Polarizing Photovoltaic Device and its Application in Liquid Crystal Displays and Tandem Solar Cells
• Conjugated Polymers with Selenium Substituted Diketopyrrolopyrrole Unit for Electronics Devices
• Multiple Donor/Acceptor Bulk Heterojunction Solar Cells
• Au Nanoparticles Doped Polyaniline Nanofiber Non-Volatile Memory Device
• Titanium Oxide as the Window Layer for Metal Chalcogenide Photovoltaic Devices
• Novel Polymers For Polymer Solar Cells, Transistors, And Sensors
• Silver Nanowire-Indium Tin Oxide Nanoparticle As A Transparent Conductor For Optoelectronic Devices
• Design Of Semi-Transparent, Transparent, Stacked Or Top-Illuminated Organic Photovoltaic Devices
• Amorphous Silicon And Polymer Hybrid Tandem Photovoltaic Cell
• Efficient And Stable Of Perovskite Solar Cells With All Solution Processed Metal Oxide Transporting Layers
• A Bi-Functional Lewis Base Additive For Microscopic Homogeneity In Perovskite Solar Cells

Tech ID/UC Case

21699/2003-194-0

Related Cases

2003-194-0

國家/地區

美國