SILICIDE NANOCRYSTAL MEMORY DEVICE
qImproved retention time so the data is preserved for a greater period of time. qFaster read-only programming on a memory device for permanent storage. qA non-volatile memory device that can retain stored information even when not receiving power.
UCR researchers have developed a novel method of making a reduced sized nanocrystal memory device that can be integrated with scaled-down CMOS platforms. The reduced size of the thin tunnel oxide allows for faster programming and erasure speeds without the degradation to data retention.
Patent Number: US8481386B2
Application Number: US2010757812A
Inventor: Liu, Jianlin | Zhao, Dengtao | Zhu, Yan | Li, Ruigang | Li, Bei
Priority Date: 9 Apr 2009
Priority Number: US8481386B2
Application Date: 9 Apr 2010
Publication Date: 9 Jul 2013
IPC Current: H01L0021336
US Class: 438257 | 257316 | 257E21209 | 257E2903 | 438260
Assignee Applicant: The Regents of the University of California
Title: Nanocrystal memories and methods of forming the same
Usefulness: Nanocrystal memories and methods of forming the same
Novelty: Formation of memory device involves depositing oxide layer on substrate, depositing metal nanodots, providing silicon source, absorbing portion(s) of silicon into dots, forming silicide nanocrystals, and forming control oxide layer
电子
半导体
8481386
Tech ID/UC Case 23717/2005-292-2 Related Cases 2005-292-2
美国
