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SILICIDE NANOCRYSTAL MEMORY DEVICE

技術優勢: qImproved retention time so the data is preserved for a greater period of time. qFaster read-only programming on a memory device for permanent storage. qA non-volatile memory device that can retain stored information even when not receiving power.

詳細技術說明: UCR researchers have developed a novel method of making a reduced sized nanocrystal memory device that can be integrated with scaled-down CMOS platforms. The reduced size of the thin tunnel oxide allows for faster programming and erasure speeds without the degradation to data retention.

*Abstract: The retention time, programming speed, and erasure speed are the basic parameters to measure the effectiveness of a nanocrystal memory device. In an effort to improve these parameters, previous attempts have tried to scale down the nanocrystal memory device but a thin tunnel oxide can degrade retention time. As such, there is a great need for improved method for forming a nanocrystal memory device.

*Principal Investigation: Name: Ruigang Li
Department:

Name: Jianlin Liu
Department:

Name: Dengtao Zhao
Department:

Name: Yan Zhu
Department:

附加資料: Patent Number: US8481386B2
Application Number: US2010757812A
Inventor: Liu, Jianlin | Zhao, Dengtao | Zhu, Yan | Li, Ruigang | Li, Bei
Priority Date: 9 Apr 2009
Priority Number: US8481386B2
Application Date: 9 Apr 2010
Publication Date: 9 Jul 2013
IPC Current: H01L0021336
US Class: 438257 | 257316 | 257E21209 | 257E2903 | 438260
Assignee Applicant: The Regents of the University of California
Title: Nanocrystal memories and methods of forming the same
Usefulness: Nanocrystal memories and methods of forming the same
Novelty: Formation of memory device involves depositing oxide layer on substrate, depositing metal nanodots, providing silicon source, absorbing portion(s) of silicon into dots, forming silicide nanocrystals, and forming control oxide layer

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