亚洲知识产权资讯网为知识产权业界提供一个一站式网上交易平台，协助业界发掘知识产权贸易商机，并与环球知识产权业界建立联系。无论你是知识产权拥有者正在出售您的知识产权，或是制造商需要购买技术以提高操作效能，又或是知识产权配套服务供应商，你将会从本网站发掘到有用的知识产权贸易资讯。

返回搜索结果

SILICIDE NANOCRYSTAL MEMORY DEVICE

技术优势: qImproved retention time so the data is preserved for a greater period of time. qFaster read-only programming on a memory device for permanent storage. qA non-volatile memory device that can retain stored information even when not receiving power.

详细技术说明: UCR researchers have developed a novel method of making a reduced sized nanocrystal memory device that can be integrated with scaled-down CMOS platforms. The reduced size of the thin tunnel oxide allows for faster programming and erasure speeds without the degradation to data retention.

*Abstract: The retention time, programming speed, and erasure speed are the basic parameters to measure the effectiveness of a nanocrystal memory device. In an effort to improve these parameters, previous attempts have tried to scale down the nanocrystal memory device but a thin tunnel oxide can degrade retention time. As such, there is a great need for improved method for forming a nanocrystal memory device.

*Principal Investigation: Name: Ruigang Li
Department:

Name: Jianlin Liu
Department:

Name: Dengtao Zhao
Department:

Name: Yan Zhu
Department:

附加资料: Patent Number: US8481386B2
Application Number: US2010757812A
Inventor: Liu, Jianlin | Zhao, Dengtao | Zhu, Yan | Li, Ruigang | Li, Bei
Priority Date: 9 Apr 2009
Priority Number: US8481386B2
Application Date: 9 Apr 2010
Publication Date: 9 Jul 2013
IPC Current: H01L0021336
US Class: 438257 | 257316 | 257E21209 | 257E2903 | 438260
Assignee Applicant: The Regents of the University of California
Title: Nanocrystal memories and methods of forming the same
Usefulness: Nanocrystal memories and methods of forming the same
Novelty: Formation of memory device involves depositing oxide layer on substrate, depositing metal nanodots, providing silicon source, absorbing portion(s) of silicon into dots, forming silicide nanocrystals, and forming control oxide layer

欲了解更多信息，请点击这里