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SiC Power DMOSFETs with Self-Aligned Source Contacts
总结
Purdue University researchers have developed a novel design for DMOSFETs with self-aligning source contacts, which reduce the size of the source contacts and consequently reduces the specific-on resistance of the device.
技术优势
Reduces specific on-resistanceIncrease yield Decreased cost
技术应用
Computer TechnologyCircuitryHardware
详细技术说明
James Cooper Jr.Purdue Electrical and Computer Engineering
国家
United States
申请号码
8,035,112
国家/地区
美国
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