Electronic Phase Change Memory Device Induced by Forced Ion Migration
Capable of exhibiting more than two data states (current memory devices). Benefits include increased memory density due to having more than two data states and ability to function as a fuse or ΓÇÿactivatedΓÇÖ memory device.
Boise State University has invented a memory device with multiple memory states and the ability to hibernate in a circuit until ΓÇÿactivatedΓÇÖ. Our device contains a new material, and method of activating the material, used for non-volatile memory technology. The devices tested included three alloy stacks consisting of Ge (Germanium), Te (Tellurium), Se (Selenium) and Sn (tin). All devices showed resistance switching, phase change memory behavior. Potential uses of this technology include a memory device capable of exhibiting more than two data states.
Inventor: Campbell, Kristy A.
Priority Number: US7924608B2
IPC Current: G11C001100
US Class: 365163 | 257002 | 257005 | 365148 | 438095 | 977754
Assignee Applicant: Boise State University,Boise
Title: Forced ion migration for chalcogenide phase change memory device
Usefulness: Forced ion migration for chalcogenide phase change memory device
Novelty: Electronic memory device for phase-change memory operation has chalcogenide layers which are stacked, such that electric field is applied to move ion from one chalcogenide layer to another chalcogenide layer
电子
半导体
美国
