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Electronic Phase Change Memory Device Induced by Forced Ion Migration

技術優勢

Capable of exhibiting more than two data states (current memory devices). Benefits include increased memory density due to having more than two data states and ability to function as a fuse or ΓÇÿactivatedΓÇÖ memory device.

詳細技術說明

Boise State University has invented a memory device with multiple memory states and the ability to hibernate in a circuit until ΓÇÿactivatedΓÇÖ. Our device contains a new material, and method of activating the material, used for non-volatile memory technology. The devices tested included three alloy stacks consisting of Ge (Germanium), Te (Tellurium), Se (Selenium) and Sn (tin). All devices showed resistance switching, phase change memory behavior. Potential uses of this technology include a memory device capable of exhibiting more than two data states.

*Abstract

Research into new random access electronic memory technologies has grown significantly in the past 10 years due to the near realization of the scaling limits of DRAM and the low cycle lifetime, high power requirements, and radiation sensitivity of Flash. At the forefront of this research is the phase-change random access memory (PCRAM). Phase-change memory is a non-volatile, resistance variable memory technology whereby the state of the memory bit is defined by the memory material's resistance. Chalcogenide materials, those containing S, Se, or Te, have been the most widely investigated materials for electronic resistance variable memory applications since the discovery of the electronic resistance switching effect in a chalcogenide material. Chalcogenide materials are desirable for use in electronic memories due to the wide range of glasses they can form and the corresponding wide variety of glass transition and melting temperatures. One of the most well studied resistance switching chalcogenide materials is the Ge2Sb2Tes (GST) alloy, but there have been many challenges to the implementation of a phase-change memory product such as the high programming current requirements, variation in switching voltages and ON/OFF resistance ratios, thermal stresses on the materials, and their adhesion to the electrodes.

*Principal Investigation

Name: Kris Campbell, Associate Professor

Department: Electrical & Computer Engineering

附加資料

Inventor: Campbell, Kristy A.
Priority Number: US7924608B2
IPC Current: G11C001100
US Class: 365163 | 257002 | 257005 | 365148 | 438095 | 977754
Assignee Applicant: Boise State University,Boise
Title: Forced ion migration for chalcogenide phase change memory device
Usefulness: Forced ion migration for chalcogenide phase change memory device
Novelty: Electronic memory device for phase-change memory operation has chalcogenide layers which are stacked, such that electric field is applied to move ion from one chalcogenide layer to another chalcogenide layer

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