采用接地導電柵网的直流等离子体离子注入裝置
- 标题
- 采用接地導電柵网的直流等离子体离子注入裝置
- 总结
-
This novel plasma immersion ion implantation technology is performed in a low pressure steady state direct current and long-pulse mode, with the help of a grounded / biased conducting grid positioned between the wafer stage and plasma source.
- 技术应用
-
•For use in microelectronics, biomedical, and materials industries
- 申请日期
- 22/09/2004
- ID号码
- ZL00106152.6
- 国家/地区
- 香港
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