Method For Detection Of Defects In Semiconductors Using A Novel Multiphoton Microscope

Title:  Method For Detection Of Defects In Semiconductors Invention:  This is a system that uses a multi-photon microscope to scan and detect defects in thin films of semiconducting materials including polymers and crystals.  The novel detection technique identifies areas exhibiting anomalies for further inspection with 2 micron resolution. Background:  Conventional methods of measuring a spectrum from a sample using multi-photon microscopy (MPM) typically involve setting galvanometers at their highest speed with lowest pixel resolution to scan a whole area quickly,  But that imaging technique takes an average of the surface of the sample and does not properly illuminate certain regions for a sufficient period of time to catch all defects.  Random sampling also misses many defects. Applications:*  Defect detection in materials Advantages:*  Higher detection rate*  Provides analysis of the defect*  Works for silicon wafers, amorphous silicon, thin films of polymers and copolymers, blends that include fullerenes,  and semiconductor crystals Contact:  Amy Phillipsamyp@tla.arizona.eduRefer to case number UA18-096

USA