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Selective Transfer Of A Thin Pattern From Layered Material Using A Patterned Handle


Technology Benefits

Leverages established processing steps and is CMOS-process-compatible Enables the handle layer to be self-aligned to material isolated by etching, using the photoresist as a standard etch mask Amenable to stamp-based methods, where the pattern handle is itself the transfer medium


Technology Application

Removal of nanometers-thick, laterally patterned material a many-layered Van der Waals crystal (e.g., graphite or molybdenite) for depositing on a desired substrate Relevant applications are for optical, electronic, sensing, and biomedical devices Allows patterned nanoscale-layered material to be isolated and transferred using standard pressure-sensitive adhesives or viscoelastic stamps


Detailed Technology Description

None


Others

Additional Technologies by these Inventors


Tech ID/UC Case

27650/2017-154-0


Related Cases

2017-154-0


Country/Region

USA

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