Graphene-Polymer Nanocomposite Incorporating Chemically Doped Graphene-Polymer Heterostructure for Flexible and Transparent Conductive Films

Flexible and transparent electrode materialUniform transmittance over the UV-visible-near-infrared spectrumCan withstand compressive stress up to 23 GPaSheet resistance up to 15 ohms/square± 90 degrees bending angle

TCEs for optoelectronics (i.e.; solar cells, display, and LED technologies)Conductive polymers and composite electrodesFlexible electroluminescence devices

Researchers led by Professor Kang Wang have developed an innovative chemically doped graphene-polymer nanocomposite as an alternative to ITO for flexible electronic technologies. This material has a sheet resistance up to 15 ohms per square and over 90% transmittance at 550 nm, with a uniform transmittance throughout the UV-visible-near-infrared spectrum. Likewise, under an applied compressive stress there is no change in the film resistance up to 23 gigapascals and the material has a bending angle flexibility of more than ± 90 degrees.

20180130569

State Of Development

Flexible doped graphene/polymer nanocomposite thin films have been fabricated and the electrical and optical properties have been characterized.

Background

Transparent conductive electrodes are an essential part of optoelectronics, such as light emitting diodes (LEDs), displays, and solar cells. The current TCE field is dominated by indium tin oxide (ITO) thin films because of its good stability, high conductivity, transparency, and suitable energy level. However, ITO’s brittleness limits its application in flexible and stretchable devices. As well, ITO is expensive and has a very low transmittance in the ultraviolet (UV) range (53% at 300 nm). Current alternative materials (i.e.; silver nanowires, graphene, and carbon nanotubes) have not been able to effectively replace ITO, where replacement materials must be cheap, transparent, and highly conductive to be competitive in this space.

Additional Technologies by these Inventors

• Relaxed SiGe Films by Surfactant Mediation
• Vertical Gate-Depleted Single Electron Transistors
• Novel Telegraph Signal Microscope For Visualizing Single Atoms And Detecting Defects In Nanotechnology Devices
• Novel Nanomaterial-based Thermo-Photovoltaic Cells
• Graphene Flash Memory Device
• Vertical-Stacked-Array-Transistor (VSAT) for Nonvolatile Memory Devices
• Vsat Structure for Nonvolatile Memory Device
• Epitaxial Growth of Single Crystalline MgO on Germanium
• A Self-Organized Critical CMOS Circuit for Computation and Information Processing
• Anti-Ferromagnetic Magneto-Electric Spin-Orbit Read Logic
• Quasi Van Der Walls Epitaxy Of GaAs on Graphene
• Periodically Rippled Antenna
• Fabrication Of 1D Sinusoidal Silicon Dioxide Substrate
• Strained Voltage-Controlled Magnetic Memory Elements and Devices

Tech ID/UC Case

29041/2016-211-0

Related Cases

2016-211-0

USA

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