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Single Nanomagnet Spintronics Memory Device

Summary

Researchers at Purdue University have developed a simplified spintronics memory device comprising a single free-layer nanomagnet structure. The magnetic orientation of the nanomagnet is controlled and sensed by charge currents flowing through a channel with spin momentum locking (SML) upon which the nanomagnet is fabricated. This technology offers new materials selection to optimize the writing and readout processes. This simplification allows for further downsizing of spintronic memories to unprecedented levels.

Technology Benefits

Circumvents limitations of magnetic tunnel junctions Uses a single free-layer structure Optimizes the writing and readout processes Downsizing of spintronic memories to unprecedented levels

Technology Application

Semiconductor based memory technologies Magnetic random access memory

Detailed Technology Description

Ernesto MarineroPurdue Materials EngineeringPurdue Electrical and Computer Engineering

Countries

United States

Application No.

None

Country/Region

USA

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