Polarization-Doped Field Effect Transistors with Increased Performance

•    Higher Mobility •    High Power •    Low Temperature Operations •    No Impurity Scattering •    High Breakdown Field in AlGaN •    No carrier freeze-out

•    Microwave transistors •    High-frequency power amplification    This technology is available for licensing. Click here to request more information.

Researchers at the University of California, Santa Barbara have developed a new method for altering semiconductor properties in field effect transistors using “polarization doping.” The resulting polarization-doped field effect transistors (PolFETs) are free from the problems associated with ionized impurity scattering and are able to achieve higher currents and transconductance than equivalent impurity-doped FETs. When compared to traditional impurity doped transistors, these PolFETs also exhibited higher mobility, lower temperature operations, and a higher breakdown field.

Patent Number: US7525130B2
Application Number: US2005241804A
Inventor: Mishra, Umesh K. | Xing, Huili | Jena, Debdeep | Rajan, Siddharth
Priority Date: 29 Sep 2004
Priority Number: US7525130B2
Application Date: 29 Sep 2005
Publication Date: 28 Apr 2009
IPC Current: H01L003100
US Class: 257183 | 257192 | 257E29249
Assignee Applicant: The Regents of the University of California
Title: Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same
Usefulness: Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same
Summary: For microwave applications.
Novelty: III-V nitride based field effect transistor for microwave applications, comprises n or p type polarization doped channel made of aluminum, gallium and nitride, underlying source, gate and drain regions

Electronics

Semiconductor

7525130

Background

Bulk doping in novel III-V electronic materials used for field effect transistors exhibit strong spontaneous and piezoelectric polarization. Previous bulk doping was achieved using impurity doping. However, this method produces impurity scattering resulting in less mobility and decreased carrier concentration at low temperatures.

 

Additional Technologies by these Inventors

• Novel Current-Blocking Layer in High-Power Current Aperture Vertical Electron Transistors (CAVETs)
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• High-Quality N-Face GaN, InN, AlN by MOCVD
• Defect Reduction in GaN films using in-situ SiNx Nanomask
• GaN-based Vertical Metal Oxide Semiconductor and Junction Field Effect Transistors
• Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
• Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
• A Structure For Increasing Mobility In A High-Electron-Mobility Transistor
• III-N Based Material Structures and Circuit Modules Based on Strain Management
• Achieving “Active P-Type Layer/Layers” In III-Nitride Epitaxial Or Device Structures Having Buried P-Type Layers
• Improved Performance of III-Nitride Photonic Devices
• Gated Electrodes For Electrolysis And Electrosynthesis
• Fabrication of N-face to Improve Telecommunications Efficiency
• Methods for Locally Changing the Electric Field Distribution in Electron Devices

Tech ID/UC Case

23311/2004-163-0

Related Cases

2004-163-0

USA

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