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LED manufacturing This technology is available for licensing.
Detailed Technology Description
Researchers at the University of California, Santa Barbara have developed a III-nitride light emitting diode (LED), in which light can be extracted from two surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. This technology minimizes the light re-absorption at the LED active region by eliminating light reflection at the p-type side surface of the LED chip.
Supplementary Information
Patent Number: US8124991B2 Application Number: US2008181100A Inventor: Iso, Kenji | Asamizu, Hirokuni | Saito, Makoto | Sato, Hitoshi | DenBaars, Steven P. | Nakamura, Shuji Priority Date: 26 Jul 2007 Priority Number: US8124991B2 Application Date: 28 Jul 2008 Publication Date: 28 Feb 2012 IPC Current: H01L003300 | H01L003314 | H01L003362 US Class: 257098 | 257091 | 257094 | 257095 | 257096 | 257097 | 257099 | 257103 | 257E23028 | 257E25032 | 257E33054 | 257E33068 | 257E33077 | 438029 | 257E2528 Assignee Applicant: The Regents of the University of California Title: Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency Usefulness: Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency Summary: Used as a light emitting device. Novelty: Light emitting device comprises a LED structure comprised of an active layer positioned between positive and negative type layers, and a transparent sub-mount material bonded to a first surface of the structure using transparent glue layer
Industry
Optics
Sub Group
LED/OLED
Application No.
8124991
Others
Background
The LED structure affects how much light is emitted. In order to increase the light output power from the front side of the LED, conventional LEDs are typically equipped with a mirror placed on the backside of the substrate, or a mirror coating on the lead frame. However, this reflected light is re-absorbed by the active region of the LED, because the photon energy of emitted light is almost same as the band-gap energy of the light emitting materials. Due to this re-absorption of the emitted light by the active region, the net output power or the efficiency of the LED is decreased. Therefore, to achieve highly output power efficiency of the LED, device structures in which re-absorption of the light is minimized are desirable.
