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LED manufacturing This technology is available for licensing.
Detailed Technology Description
Researchers at the University of California, Santa Barbara have developed new LED structures that provide increased light extraction efficiency while retaining a planar structure. The planar structure makes the new LED structures easy to manufacture and at low cost.
Supplementary Information
Patent Number: US7291864B2 Application Number: US200567910A Inventor: Weisbuch, Claude C. A. | David, Aurelien J. F. | Speck, James S. | DenBaars, Steven P. Priority Date: 28 Feb 2005 Priority Number: US7291864B2 Application Date: 28 Feb 2005 Publication Date: 6 Nov 2007 IPC Current: H01L002922 | H01L003320 | H01L003322 | H01L003324 US Class: 257098 | 257079 | 257435 | 257436 | 257E33067 | 257E33068 | 257E51021 | 257E3067 | 257E5021 Assignee Applicant: The Regents of the University of California Title: Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate Usefulness: Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate Novelty: Light emitting diode, has set of patterned layers deposited on buffer layer, where each patterned layer has mask and materials filling holes in mask, and set of active layers formed between patterned layers
Industry
Optics
Sub Group
LED/OLED
Application No.
7755096
Others
Background
As semiconductor materials have improved, the efficiency of semiconductor devices has also improved and new wavelength ranges have been used. Gallium nitride (GaN) based light emitters are probably the most promising for a variety of applications. GaN provides efficient illumination in the ultraviolet (UV) to amber spectrum, when alloyed with varying concentrates of indium (In), for example. Unfortunately, most of the light emitted within a semiconductor LED material is lost due to total internal reflection at the semiconductor-air interface. Typical semiconductor materials have a high index of refraction, and thus, according to Snell's law, most of the light will remain trapped in the materials, thereby degrading efficiency. By choosing a suitable geometry for the LED, a higher extraction efficiency can be achieved.
