AsiaIPEX is a one-stop-shop for players in the IP industry, facilitating IP trade and connection to the IP world. Whether you are a patent owner interested in selling your IP, or a manufacturer looking to buy technologies to upgrade your operation, you will find the portal a useful resource.
Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD
Technology Benefits
Large available surface area (samples grown on 2-inch diameter substrates, compared to areas on the order of a few micrometers achieved by prior art) Increased device efficiencies compared to c-plane devices Planar film surface Minimized surface undulations and crystallographic defects
Technology Application
High-Performance Nitride-Based Optoelectronics and Semiconductor Devices This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.
Detailed Technology Description
Researchers at the University of California, Santa Barbara have developed a method for enhancing growth of semipolar (Al,In,Ga,B)N films via metalorganic chemical vapor deposition (MOCVD). This method involves growth of nitride films on the semipolar {11 22} plane to overcome performance limitations associated with the polar c-plane, thus increasing device efficiencies. It yields samples grown on 2-inch diameter substrates, compared with areas of a few micrometers accomplished using existing methods. This method also results in a planar film surface, few surface undulations, and a reduced number of crystallographic defects, all necessary features to support application to state-of-the-art nitride semipolar electronic devices.
Supplementary Information
Patent Number: US7687293B2 Application Number: US2007655572A Inventor: Sato, Hiroshi | Kaeding, John F. | Iza, Michael | Baker, Troy J. | Haskell, Benjamin A. | DenBaars, Steven P. | Nakamura, Shuji Priority Date: 20 Jan 2006 Priority Number: US7687293B2 Application Date: 19 Jan 2007 Publication Date: 30 Mar 2010 IPC Current: H01L002100 | H01L002900 US Class: 438046 | 257012 | 257013 | 257079 | 257086 | 257094 | 257E21113 | 257E21121 | 257E21463 | 438041 | 438048 | 438481 | 438485 Assignee Applicant: The Regents of the University of California Title: Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition Usefulness: Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition Summary: For growing device-quality planar semipolar nitride semiconductor thin films to form nitride semipolar electronic devices (claimed) e.g. semipolar LEDs. Novelty: Enhancing growth of device-quality planar semipolar nitride semiconductor thin film involves depositing semipolar nitride semiconductor thin film on nucleation/buffer layer of mixed nitrides of aluminum, indium or gallium containing indium
Industry
Electronics
Sub Group
Semiconductor
Application No.
7687293
Others
Background
Existing methods of producing semipolar nitride films are extremely cumbersome and yield areas too small for device fabrication, thus there is a need for a new method that overcomes these obstacles in order to take advantage of the performance benefits of using semipolar nitride films.
