Epitaxial Growth of Single Crystalline MgO on Germanium

Professor Wang and colleagues have demonstrated epitaxial growth of magnesium oxide on Germanium (Ge) with single crystalline order and atomically smooth morphology. One application of the MgO/Ge interface is use in a Ge-based Metal-oxide-semiconductor field-effect transistor (MOSFET) to amplify or switch electronic signals. Another application of this technology would utilize the ferromagnetic metal/MgO/Ge tunnel junction to realize efficient spin injection from ferromagnetic metals into Ge.

8766341

Additional Technologies by these Inventors

• Relaxed SiGe Films by Surfactant Mediation
• Vertical Gate-Depleted Single Electron Transistors
• Novel Telegraph Signal Microscope For Visualizing Single Atoms And Detecting Defects In Nanotechnology Devices
• Novel Nanomaterial-based Thermo-Photovoltaic Cells
• Graphene Flash Memory Device
• Vertical-Stacked-Array-Transistor (VSAT) for Nonvolatile Memory Devices
• Vsat Structure for Nonvolatile Memory Device
• A Self-Organized Critical CMOS Circuit for Computation and Information Processing
• Anti-Ferromagnetic Magneto-Electric Spin-Orbit Read Logic
• Quasi Van Der Walls Epitaxy Of GaAs on Graphene
• Periodically Rippled Antenna
• Graphene-Polymer Nanocomposite Incorporating Chemically Doped Graphene-Polymer Heterostructure for Flexible and Transparent Conductive Films
• Fabrication Of 1D Sinusoidal Silicon Dioxide Substrate
• Strained Voltage-Controlled Magnetic Memory Elements and Devices

Tech ID/UC Case

24617/2010-244-0

Related Cases

2010-244-0

USA