Spin Injector
Injects charge carriers efficiently with near 100% spin polarization Avoids high contact resistance
Spintronics Spin FETs Alternatives to Si CMOS devices
The fundamentally new approach for efficient spin injection can inject charge carriers such that near 100% of the charge carriers are spin polarized. The approach avoids the drawbacks and shortcomings associated with diffusion-based current injection and tunnel injection. The spin injector can enable viable spin FETs composed of ferromagnetic material sandwiched between two semiconductors, which may potentially provide an alternative to Si CMOS electronics.
Patent Number: US8098515B2
Application Number: US2008307741A
Inventor: Xie, Ya-Hong
Priority Date: 7 Jul 2006
Priority Number: US8098515B2
Application Date: 6 Jan 2009
Publication Date: 17 Jan 2012
IPC Current: G11C001100
US Class: 365158 | 257421 | 257E21665 | 365171 | 365173 | 977935
Assignee Applicant: The Regents of the University of California
Title: Spin injection device having semiconductor-ferromagnetic-semiconductor structure and spin transistor
Usefulness: Spin injection device having semiconductor-ferromagnetic-semiconductor structure and spin transistor
Summary: For field effect transistor used in magnetic RAM, magnetic field sensor, position sensor, speed sensor, hard disk head, field programmable gate array, etc.
Novelty: Spin injection device for field-effect transistor used in magnetic RAM, injects charge carriers which are spin-polarized when traversing ferromagnetic material, into single crystalline semiconductor material
Electronics
Semiconductor
Background Field effect transistors (FETs) provide a fundamental building block for electronic devices. Unlike conventional FETs, spin FETs are based on the manipulation of electronic spin states of electrical carriers. Spin FETs require an injector to introduce spin-polarized electrical carriers into the channel region. Diffusion-based current injection and tunnel injection have been used to inject charge carriers. However, diffusion-based current injection suffers from the electrical conductivity mismatch between ferromagnetic materials and semiconductors, prohibiting efficient spin injection. Tunnel injection suffers from high contact resistance which is detrimental to FET operations. Additional Technologies by these Inventors Tech ID/UC Case 20136/2006-689-0 Related Cases 2006-689-0
USA
