Relaxed SiGe Films by Surfactant Mediation

The new UC technology provides the following benefits: Produces thin buffers with low costs and high yields; Low-temperature growth process can be integrated into any current type of processing technology that requires lower thermal budgets; Greatly improves the quality of buffers in terms of both threading dislocation density and surface roughness.

This new technology has several uses in semiconductor production, including: Ge or SiGe detectors grown on Si for 1.3 mm and 1.55 mm communications applications; High Ge content Si1-XGeX/Si1-YGeY/Si1-ZGeZ heterojunction bipolar transistors (HBTs); III-IV opto-electronic devices, such as light emitting diodes (LEDs) integrated on Si substrate using SiGe buffers graded to pure Ge.

Scientists at the University of California have developed a novel method of using Sb as a surfactant to promote the growth of thin, high-quality relaxed SiGe buffers.

Patent Number: US6995076B2
Application Number: US2001947774A
Inventor: Wang, Kang L. | Liu, Jianlin
Priority Date: 5 Sep 2000
Priority Number: US6995076B2
Application Date: 5 Sep 2001
Publication Date: 7 Feb 2006
IPC Current: H01L0021205 | C23C001402 | C30B002302 | H01L002120
US Class: 438478 | 117090 | 257E21125
Assignee Applicant: The Regents of the University of California
Title: Relaxed SiGe films by surfactant mediation
Usefulness: Relaxed SiGe films by surfactant mediation
Summary: For formation of semiconductor.
Novelty: Production of relaxed silicon germide buffer for formation of semiconductor, involves depositing layer of metallic surfactant on substrate followed by depositing growing film of silicon-germanium on surfactant

Electronics

Semiconductor

6995076

Background

Relaxed SiGe has become an important material in the fabrication of high-quality films for various applications. Strain-relaxed SiGe buffers have been produced by at least three known methods. However, these techniques present several disadvantages, such as long growth times, thick buffer layers, rough surfaces, high residual strain degree, and high threading dislocation densities. These problems can result in low yields, increased costs, and poor quality in the devices that are grown on the buffers. However, it has been found that a surfactant could be used to inhibit island formation in strain layer heteroepitaxy and, therefore, promote two-dimensional growth for the development of high-quality electron devices.

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Tech ID/UC Case

10181/2000-304-0

Related Cases

2000-304-0

USA

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