Method For Superconducting Tunnel Junction Fabrication
• Epitaxial deposition using ALD eliminates defects that previously prevented commercial viability of this technology.• Application of ALD to create tunnel junction barriers allows the barrier thickness to be precisely tuned down to 0.02nm, allowing for further improvements in device properties. • High quality tunnel barriers can be deposited on materials that do not natively oxidize.• Tunnel junction cryogenic refrigerators, cryogenic thermometers, superconducting quantum computer bits (qubits).
Researchers from UC San Diego have developed a new process for fabricating high quality tunnel barriers in NIS and SIS tunnel junctions. Specifically, the inventors have demonstrated a large area superconducting tunnel junction using atomic layer deposition (ALD) to form a high quality insulating tunnel barrier.
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State Of Development Working prototype demonstrates viability of technology: electronic transport measurements confirm that single-particle electron tunneling is the dominant transport mechanism, and the measured current-voltage curves demonstrate the viability of using these devices as self-calibrated, low temperature thermometers with a wide range of tunable parameters. Related Materials Tech ID/UC Case 24082/2013-242-0 Related Cases 2013-242-0
USA
