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Feedback Mechanism for High Power RF Power Amplifiers

Detailed Technology Description

Presented here is a new type of microwave power amplifier that can get higher output power and efficiency than state-of-the-art microwave power amplifiers implemented in monolithic silicon processes. This invention takes advantage of a feedback network to optimize the power handling of a transistor. Feedback is normally avoided in power amplifiers because it limits the gain and hurts the amplifier efficiency. In this invention, the feedback is shown to keep the transistor delivering the peak power over a broader range of input power levels. Consequently, higher efficiency is also reached.

Supplementary Information

Inventor: KALANTARI, Nader | BUCKWALTER, James
Priority Number: WO2013071133A3
IPC Current: H03F000134 | H03F000156
Assignee Applicant: The Regents of the University of California
Title: RADIO FREQUENCY POWER AMPLIFIERS | AMPLIFICATEUR DE PUISSANCE RADIOFRÉQUENCE
Usefulness: RADIO FREQUENCY POWER AMPLIFIERS | AMPLIFICATEUR DE PUISSANCE RADIOFRÉQUENCE
Novelty: Radio frequency (RF) power amplifier apparatus has primary impedance match and secondary impedance match that are configured by biasing active device to produce transconductance

Industry

Electronics

Sub Group

Circuit Design

Application No.

9160286

Others

Other Information

A Nested Reactive Feedback Power Amplifier for Q-band Operation

Tech ID/UC Case

22676/2012-063-0

Related Cases

2012-063-0

Country/Region

USA

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