STI-bounded Single-photon Detector in a Deep-submicron CMOS Process
Researchers at the University of California , San Diego , have invented a compact Silicon single-photon Avalanche Photodetector (SPAD) that is manufacturable using commercially available deep-submicron standard CMOS processing methods. The uniqueness of the device is in its compact ability to prevent premature breakdown. The benefits of the device over existing technology are improved timing accuracy, increased dynamic range due to decreased dark current, increased frame rate due to reduced capacitance, reduced time lag inaccuracy (jitter), enhanced spatial resolution, and reduced power consumption and heat generation. By integrating an array of such detectors, with appropriate timing, biasing, and counting circuitry, and with active illumination, one may acquire a low-light-level two or three-dimensional image with a higher dynamic range than present detectors. Alternatively, one could acquire an image of a fluorescent sample with improved S/N using Time-Correlated Single-photon counting techniques. Finally, this device allows one to generate two distinct, but simultaneous, electrical signals in the same pixel—one corresponding to absorption of a short wavelength photon, the other being a longer wavelength photon.
Patent Number: US20120261729A1
Application Number: US13449257A
Inventor: Finkelstein, Hod | Esener, Sadik C.
Priority Date: 21 Jul 2006
Priority Number: US20120261729A1
Application Date: 17 Apr 2012
Publication Date: 18 Oct 2012
IPC Current: H01L003102
US Class: 257290 | 257438 | 257E3111
Assignee Applicant: The Regents of the University of California
Title: SHALLOW-TRENCH-ISOLATION (STI)-BOUNDED SINGLE-PHOTON AVALANCHE PHOTODETECTORS
Usefulness: SHALLOW-TRENCH-ISOLATION (STI)-BOUNDED SINGLE-PHOTON AVALANCHE PHOTODETECTORS
Summary: Single photon avalanche diode device for fluorescence cross correlation spectroscopy application. Can also be used in biological applications in fluorescent imaging, three dimensional imaging for biometric and industrial applications, military applications and semiconductor defect analysis.
Novelty: Single photon avalanche diode device for fluorescence cross correlation spectroscopy application, has shallow region in well region inside guard ring which is doped to exhibit p-type conductivity
Electronics
Semiconductor
8188563
State Of Development This technology is in early-stage development, but is presently available for licensing. Additional Technologies by these Inventors Tech ID/UC Case 21158/2006-228-0 Related Cases 2006-228-0
USA
