Zeolite Molecular Sieve Thin Films As Low-K Dielectrics
The new UC technology provides the following benefits: Pure silica zeolites demonstrate higher chemical, thermal, and mechanical stability, and lower k than sol-gel silica and surfactant templated mesoporous silica; Hydrophobic properties help to mitigate water adsorption problems; Method is easily incorporated into existing semiconductor manufacturing processes; Allows production of zeolite films with designed properties.
Scientists at the University of California have developed an novel method for using zeolite molecular sieves and low-k dielectrics as well as techniques for the design and synthesis of thin films of these materials for use as inter-metal dielectrics in ICs.
Patent Number: US6573131B2
Application Number: US2001900386A
Inventor: Yan, Yushan | Wang, Huanting | Wang, Zhengbao
Priority Date: 13 Jul 2000
Priority Number: US6573131B2
Application Date: 6 Jul 2001
Publication Date: 3 Jun 2003
IPC Current: C01B003702 | H01L0021316 | H01L0021768
US Class: 438207 | 257E21273 | 257E21274 | 257E21581 | 423326 | 423705 | 423713 | 423714 | 423715
Assignee Applicant: The Regents of the University of California
Title: Silica zeolite low-k dielectric thin films and methods for their production
Usefulness: Silica zeolite low-k dielectric thin films and methods for their production
Summary: For use as dielectric in semiconductor and other devices.
Novelty: Continuous bimodal silica zeolite film for use as dielectric in semiconductor device has specific pore volume of micropores having specific average pore size
Chemical/Material
Chemical/Material Application
6573131
Tech ID/UC Case 10131/1999-179-0 Related Cases 1999-179-0
USA
