High-Isolation Tunable MEMS Capacitive Switch
The design is useful for smart antenna systems, variable capacitors, on-chip inductors, tunable filters, and tunable RF matching circuits.
University researchers have developed a high isolation switch capable of obtaining C-band frequencies, without the need for changes in current process, and with minimum modifications is current switch designs.
Patent Number: US7265647B2
Application Number: US200580112A
Inventor: Qian, Jiangyuan | Chang, Hung Pin | Cetiner, Bedri A. | Bachman, Mark | DeFlaviis, Franco | Li, Guann Pyng
Priority Date: 12 Mar 2004
Priority Number: US7265647B2
Application Date: 14 Mar 2005
Publication Date: 4 Sep 2007
IPC Current: H01P000110 | B81B000500 | H01H005900
US Class: 333262 | 333105
Assignee Applicant: The Regents of the University of California
Title: High isolation tunable MEMS capacitive switch
Usefulness: High isolation tunable MEMS capacitive switch
Summary: Used for RF MEMS switch (claimed) used as basic building block for construction of RF components and sub-systems e.g. variable capacitors, phase shifters, tunable RF matching circuits/filters, and reconfigurable antennas.
Novelty: RF MEMS switch manufacturing method, involves suspending deflectable unit between electrodes and over insulator layer to cover portions of electrode and insulator layer
Electronics
Semiconductor
7265647
Tech ID/UC Case 18864/2003-361-0 Related Cases 2003-361-0
USA
