High-density bioelectric sensor using CMOS-integrated Junctional Field Effect Transistors (JFETs)

High-resolution measurement of bioelectric signals using electronic arrays requires a large number of very small transistor-based sensors. However, the scaling down of conventional Metal Oxide Field Effect Transistor (MOSFET) sensors often amplifies the flicker noise associated with the measurement, corrupting the already weak signals from electronic-biophysical interfaces. Although Junction Field Effect Transistors (JFETs) exhibit decreased flicker noise compared to MOSFET, fabrication of JFET sensors using conventional CMOS techniques is difficult. This technology describes a CMOS-integrated JFET with low flicker noise for use in bioelectric sensing applications. The JFET transistor design allows for a high density of transistor elements within the sensor without the associated increase in flicker noise. The technology also further reduces the complexity of bioelectric sensing systems by removing the need for additional noise reduction techniques often used to combat flicker noise.

Integrated JFET design fabricated using CMOS technologyOptimized to enable the fabrication of dense arrays of transistors for use in sensor arraysLow flicker noise characteristics of JFETs simplify sensor array design by avoiding the need for additional noise mitigation techniquesPatent Information:Patent Pending (US 20150214384)Tech Ventures Reference: IR CU13098

High density, low noise bioelectric sensing arraysAccurate sensors for biological/electrochemical assays and genomic sequencing applicationsCompact brain-machine interface (BMI) systemsCMOS-compatible JFET fabrication technique

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USA