AsiaIPEX is a one-stop-shop for players in the IP industry, facilitating IP trade and connection to the IP world. Whether you are a patent owner interested in selling your IP, or a manufacturer looking to buy technologies to upgrade your operation, you will find the portal a useful resource.

Back to search results

Low Temperature Growth of Graphene on Arbitrary Substrates

Summary

Researchers at Purdue University have discovered a simple process for producing graphene at lower temperatures, around 650 degrees Celsius, using remote plasma-enhanced chemical vapor deposition (PECVD) on various substrates. This new method is a one-step process, completely catalyst free, and does not require any pre-processing. Furthermore, this process enables full coverage of graphene over large areas within a few minutes, making this approach greener than conventional techniques. This low-temperature, rapid, non-catalytic synthesis of graphene is believed to provide a means for industrial mass production of graphene devices.

Technology Benefits

Rapid graphene growth on arbitrary non-catalytic materialsEliminates the need to transfer graphene Provides feasible means for industrial mass production of graphene devices

Technology Application

Manufacturing graphene devices

Detailed Technology Description

Zhihong ChenChen LabPurdue Electrical and Computer Engineering

Countries

United States

Application No.

None

Country/Region

USA

For more information, please click Here