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A New E-Field Writable Magnetic Random Access Memory Based on Multiferroics
Technology Benefits
Value PropositionThe E-Field MRAM:ΓÇóIs highly compact, light weight and faster as compared to conventional MRAMs.ΓÇóInvolves the use of a strong magneto-electric coupling to enable electric field induced magnetic switchingΓÇóAllows for a high power efficient (ultra-low power) electric control of anisotropic magneto-resistance (AMR) and giant magneto-resistance (GMR) as compared to a magnetic control observed with conventional memory systemsΓÇóWould be commercially useful as new memory means for computers, cell phones, etc.
Detailed Technology Description
None
Country/Region
USA
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