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采用接地導電柵网的直流等离子体离子注入裝置
IP Title
采用接地導電柵网的直流等离子体离子注入裝置
Summary
This novel plasma immersion ion implantation technology is performed in a low pressure steady state direct current and long-pulse mode, with the help of a grounded / biased conducting grid positioned between the wafer stage and plasma source.
Technology Application
•For use in microelectronics, biomedical, and materials industries
Application Date
22/09/2004
ID No.
ZL00106152.6
Country/Region
Hong Kong
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