Media.Player

Method of Forming Polycrystalline Silicon Thin Film, and Polycrystalline Silicon and Thin Film Transistor Formed by the Method使用固體激光器退火的多晶矽薄膜製備半導體器件的方法

Summary

Thin-film transistors (TFTs) are used in the construction of active-matrix devices like liquid-crystal displays (LCDs), organic light emitting diode (OLED) displays, and image sensors. TFTs based on amorphous silicon suffer from low operating speed and lack of a p-type device, making it difficult to realize peripheral circuits. There has therefore been a move to polycrystalline silicon devices, which can be obtained from amorphous silicon by furnace or laser-induced heating.

This invention introduces a technique of forming polycrystalline silicon thin films by combining the processes of crystallization of amorphous silicon and laser based annealing. The resulting quality of the films is good, uniform and reproducible. Semiconductor devices can be built on the films with a low temperature. As a result, the cost of lasers used in the process is typically low.

The resulting polycrystalline silicon can be used in a variety of applications, including but not limited to sensors, electronic devices, flat-panel displays and 3-dimensional integrated circuits (ICs).

Technology Benefits

1. Higher quality
2. Higher uniformity and reproducibility
3. Lower manufacturing cost
4. Reduction in material micro-defects
5. Resulting silicon can be used in a wide variety of applications

Technology Application

- Amorphous silicon based thin-film transistors for flat-panel liquid-crystal displays
- Polycrystalline silicon based thin-film transistors for higher information - content displays
- 3-dimensional integrated circuits
- Sensors
- Electronic devices

Supplementary Information

Patent Number: HK1105483A1
Application Number: HK7110570A
Inventor: MAN WONG | HOI-SING KWOK | ZHIGUO MENG
Priority Date: 1 Dec 2005
Priority Number: HK1105483A1
Application Date: 28 Sep 2007
Publication Date: 13 May 2011
Assignee Applicant: The Hong Kong University of Science & Technology
Title: METHOD OF FORMING POLYCRYSTALLINE SILICON THIN FILM, AND PLOYCRYSTALLINE SILICON AND THIN FILM TRANSISTOR FAMED BY THE METHOD
Usefulness: METHOD OF FORMING POLYCRYSTALLINE SILICON THIN FILM, AND PLOYCRYSTALLINE SILICON AND THIN FILM TRANSISTOR FAMED BY THE METHOD
Summary: Used for forming polycrystalline silicon that is utilized during fabrication of a semiconductor device.
Novelty: Polycrystalline silicon forming method for semiconductor device, involves annealing amorphous silicon`s layer and metal`s layer to form polycrystalline silicon layer that is irradiated with two different harmonics of pulsed laser

Industry

Electronics

Sub Category

Semiconductor

Application Date

28 Sep 2007

Application No.

Hong Kong 07110570.0

Patent Information

Hong Kong HK1105483

ID No.

TTC.PA.240S

Country/Region

Hong Kong