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Oxidation-Free Silicon Carbide MOSFETs

總結: PurdueUniversity researchers have developed a SiC surface by depositing gate oxidevs. traditional thermally grown oxide, use a combination of high temperaturehydrogen etching to clean the SiC surface, and either a hydrogen or siliconoxynitride termination structure to preserve and protect the surface prior toatomic layer deposition of the oxide. This technology removes oxidation fromthe process, which is likely responsible for the low mobility of suchstructures. When using a deposited oxide, the surface becomes the interface.This technique provides an ideal surface on which to deposit the gate oxide,resulting in an improvement in interface quality and reduction in channelresistance.

技術優勢: Provides solution for low channel mobility Improved interface quality Reduction in channel resistance

技術應用: Power electronicsLow voltage applications:Hybrid electric vehicles Server farm power suppliesRenewable energy power conversion

*Background: High channel resistance in silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) results from low electron mobility and poor oxide-SiC interface quality. A post-oxidation anneal, typically in a nitric oxide ambient, addresses this problem. Other common approaches include other anneal ambients, such as nitrous oxide, nitrogen plasma, POCI3, etc., resulting in improvements of ~10x over as grown thermal oxide, have made practical SiC MOSFETs possible. However, the resulting channel mobility is still only approximately 5 percent of the bulk SiC electron mobility. Many important applications require lower voltages. SiC channel resistance limits MOSFET performance in this voltage range.

*Web Links: Purdue Office of Technology CommercializationPurdueInnovation and EntrepreneurshipDallas MorisettePurdue Electrical and Computer Engineering

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