Oxidation-Free Silicon Carbide MOSFETs
PurdueUniversity researchers have developed a SiC surface by depositing gate oxidevs. traditional thermally grown oxide, use a combination of high temperaturehydrogen etching to clean the SiC surface, and either a hydrogen or siliconoxynitride termination structure to preserve and protect the surface prior toatomic layer deposition of the oxide. This technology removes oxidation fromthe process, which is likely responsible for the low mobility of suchstructures. When using a deposited oxide, the surface becomes the interface.This technique provides an ideal surface on which to deposit the gate oxide,resulting in an improvement in interface quality and reduction in channelresistance.
Provides solution for low channel mobility Improved interface quality Reduction in channel resistance
Power electronicsLow voltage applications:Hybrid electric vehicles Server farm power suppliesRenewable energy power conversion
Dallas MorisettePurdue Electrical and Computer Engineering
United States
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美国
