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Epitaxial Growth of Single Crystalline MgO on Germanium

详细技术说明

Professor Wang and colleagues have demonstrated epitaxial growth of magnesium oxide on Germanium (Ge) with single crystalline order and atomically smooth morphology. One application of the MgO/Ge interface is use in a Ge-based Metal-oxide-semiconductor field-effect transistor (MOSFET) to amplify or switch electronic signals. Another application of this technology would utilize the ferromagnetic metal/MgO/Ge tunnel junction to realize efficient spin injection from ferromagnetic metals into Ge.

*Abstract

None

*IP Issue Date

Jul 1, 2014

*Principal Investigation

Name: Kang Wang

Department:

Name: Yi Zhou

Department:

Name: Wei Han

Department:

Name: Roland Kawakami

Department:

申请号码

8766341

其他

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Tech ID/UC Case

24617/2010-244-0

Related Cases

2010-244-0

国家/地区

美国