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Epitaxial Growth of Single Crystalline MgO on Germanium

Detailed Technology Description

Professor Wang and colleagues have demonstrated epitaxial growth of magnesium oxide on Germanium (Ge) with single crystalline order and atomically smooth morphology. One application of the MgO/Ge interface is use in a Ge-based Metal-oxide-semiconductor field-effect transistor (MOSFET) to amplify or switch electronic signals. Another application of this technology would utilize the ferromagnetic metal/MgO/Ge tunnel junction to realize efficient spin injection from ferromagnetic metals into Ge.

Application No.

8766341

Others

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Tech ID/UC Case

24617/2010-244-0

Related Cases

2010-244-0

*Abstract

None

*IP Issue Date

Jul 1, 2014

*Principal Investigator

Name: Kang Wang

Department:

Name: Yi Zhou

Department:

Name: Wei Han

Department:

Name: Roland Kawakami

Department:

Country/Region

USA