Organic Electrical Bistable Devices Fabricated by Solution Processing
Available to low cost and simple manufacturing processesCompatible with many device architecturesHigh device densityLow production cost
Data storageOptical devicesSwitching elements
Researchers at UCLA have developed a new series of composite materials that can be used as non-volatile electronic memory devices that exhibit bistable behavior. In general, the materials are composed of a dielectric matrix material containing an organic polymer and/or an inorganic oxide, collectively which acts as an electron donor and an electron acceptor. Electronic memory and switching devices manufactured from these films can be produced more easily and inexpensively and have reduced power and thermal requirements enabling stacking in various configurations to fabricate electronic devices of higher density.
Patent Number: US7274035B2
Application Number: US2004927174A
Inventor: Yang, Yang | Ouyang, Jianyong | Szmanda, Charles R.
Priority Date: 3 Sep 2003
Priority Number: US7274035B2
Application Date: 25 Aug 2004
Publication Date: 25 Sep 2007
IPC Current: C08K000322 | H01L003100 | C08K000500 | C08L010100 | G11C001302 | H01L002131 | H01L00218247 | H01L002710 | H01L0027115 | H01L002728 | H01L005105
US Class: 257027 | 257E51027
Assignee Applicant: The Regents of the University of California
Title: Memory devices based on electric field programmable films
Usefulness: Memory devices based on electric field programmable films
Summary: Used for formation of an electric field programming film (claimed) that is utilized in a cross point array data storage device, stacked data storage device. Can also be used in an electronic memory, in device having flexible plastic substrate, inorganic oxide substrate, optical device, in switching unit for LED, in switching unit of other electronic device such as sensor, as actuation unit in micro-electro-mechanical system device and in control application of a microfluidic device.
Novelty: Electric field programming film formation composition for e.g. stacked data storage device, has electron donors and electron acceptors of type in amount effective to provide electric field programming
化工/材料
化工/材料应用
7274035
Background Additional Technologies by these Inventors Tech ID/UC Case 21699/2003-194-0 Related Cases 2003-194-0
美国
