Method For Detection Of Defects In Semiconductors Using A Novel Multiphoton Microscope
- Detailed Technology Description
- Title: Method For Detection Of Defects In Semiconductors Invention: This is a system that uses a multi-photon microscope to scan and detect defects in thin films of semiconducting materials including polymers and crystals. The novel detection technique identifies areas exhibiting anomalies for further inspection with 2 micron resolution. Background: Conventional methods of measuring a spectrum from a sample using multi-photon microscopy (MPM) typically involve setting galvanometers at their highest speed with lowest pixel resolution to scan a whole area quickly, But that imaging technique takes an average of the surface of the sample and does not properly illuminate certain regions for a sufficient period of time to catch all defects. Random sampling also misses many defects. Applications:* Defect detection in materials Advantages:* Higher detection rate* Provides analysis of the defect* Works for silicon wafers, amorphous silicon, thin films of polymers and copolymers, blends that include fullerenes, and semiconductor crystals Contact: Amy Phillipsamyp@tla.arizona.eduRefer to case number UA18-096
- *Abstract
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None
- *Principal Investigator
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Name: Shai Vardeny, Graduate Assistant, Research
Department: Optical Sciences
- Country/Region
- USA
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