Electrically Gated Modulation of Spin Hall Torque Effects in Magnetic Nanostructures
- Detailed Technology Description
- This invention is a follow-on discovery to the Reliable, Low-power MRAM technology (Cornell docket 5587) and combines the Spin Hall Effect (SHE) with voltage control of magnetic anisotropy (VCMA) to enable improved and different functionality in SHE torque effects in magnetic elements.
- Others
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- Patent application: WO2014025838
- Luqiao Liu, Chi-Feng Pai, D. C. Ralph, R. A. Buhrman, "Gate voltage modulation of spin-Hall-torque-driven magnetic switching," Cornell University (2013)
- *Abstract
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This invention is a follow-on discovery to the Reliable, Low-power MRAM technology (Cornell docket 5587) and combines the Spin Hall Effect (SHE) with voltage control of magnetic anisotropy (VCMA) to enable improved and different functionality in SHE torque effects in magnetic elements.
Spin transfer torque is in widespread development as the write mechanism for next-generation magnetic memory, while VCMA offers the potential of even better energy performance due to smaller Ohmic losses.
The VCMA effect stems from a magnetic tunnel junction comprised of two ferromagnetic thin films, one pinned and one free, separated by a thin insulating layer. The free layer is located adjacent to a non-magnetic metallic strip composed of a material having a strong SHE that can carry current flowing inf the film plane. A variety of different material combinations and configurations were fabricated and demonstrated.
Potential Applications: Magnetic nanostructures, e.g. memory, transistors
Advantages: Superior energy performance, low loss
- *Licensing
- Martin Teschlmt439@cornell.edu(607) 254-4454
- Country/Region
- USA
