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Spin Coated Group III-Nitride Compositions

Detailed Technology Description
Group III-Nitride compositions have been developed that are suitable for spin coating on large substrates.
Others

Patents:  US 7772288
*Abstract
Group III-Nitride compositions have been developed that are suitable for spin coating on large substrates. The compositions are novel colloidal dispersions of GaN prepared using methyl cellulose as a dispersant. Doping agents utilized with this invention include rare earth elements such as erbium (Er) and europium (Eu). The dispersant is easily removed by a calcination process in air. Substrates can be comprised of silicon, sapphire, or glass, and can be as large as 1.5 meters in diameter.

                  

These spin coated thin films have highly-oriented polycrystalline structure. Films doped with Er have been found to exhibit strong green light emission and resistance to temperatures as high as 1000° C. Because of their high temperature resistance, the films are compatible with CMOS technologies and can be used as on-chip light emitters.

                

Potential Applications

  • Light emitting technology for
    • Lighting
    • Displays
    • Printers
    • Lasers

                               

Advantages

  • Uses existing cost effective coating technology
  • Large area coating process
  • Highly-oriented polycrystalline structure
  • Thermally robust coating
*Licensing
Patrick Govangpjg26@cornell.edu(607) 254-2330
Country/Region
USA

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