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Self-Assembled Monolayers Having Inorganic-Organic Interfaces

Detailed Technology Description
Cornell researchers have developed fabrication methods that provide better control of the preparation and composition of thin-film growth on substrates that are generally difficult for the thin film nucleation to occur, for example a silicon wafer.
Others

Patent: 7,829,150
*Abstract

Cornell researchers have developed fabrication methods that provide better control of the preparation and composition of thin-film growth on substrates that are generally difficult for the thin film nucleation to occur, for example a silicon wafer. The fabrication methods include a reaction with the wafer surface and a precursor organic molecular species to form self-assembled monolayers (SAMs) with organic functional endgroups (OFGs). These functionalized SAMs provide an organic layer having sites in sufficient density and reactivity for thin film growth to occur.

  

SAMs are deposited using solution or vapor phase deposition. Inorganic thin film deposition is subsequently initiated by the reaction of a metal complex on the surface of the functionalized SAM. The metal complex can comprise one or more of the following:

  • a metal layer
  • a metal oxide layer
  • a metal nitride layer
  • a metal carbide layer
  • combinations or alloys such as a binary layer or a metal oxynitride layer

  

Potential Applications

  • Semiconductors and microchips
  • Organic Light emitting diodes (OLEDs)
  • Molecular electronics and microelectronics
    • Interconnect technology
    • Barrier layers (e.g. encapsulation of metallic interconnects)
  • Sealing porous materials, including polymeric materials
  • Adhesion of hard and/or functional coatings (e.g., corrosion protection)
  • Reflective coatings (e.g., low-emissive glass)

  

Advantages

  • Provides better control of the preparation and composition of thin-film inorganic materials
  • Promotes adhesion of hard and/or functional coatings
  • Good barrier layer, reflective, and electrical properties
  • Compatible with N-type and P-type doping layers as well as incorporating an intrinsic layer between the two
*Licensing
Martin Teschlmt439@cornell.edu(607) 254-4454
Country/Region
USA

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