A Process of Applying AIN Passivation to Semiconduct Devices
- Detailed Technology Description
- A method for achieving significantly improved microwave performance from Gallium Nitride (GaN) channel heterojunction field effect transistors (HFETs) has been developed.
- Others
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Patent: 7,622,322
- *Abstract
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A method for achieving significantly improved microwave performance from Gallium Nitride (GaN) channel heterojunction field effect transistors (HFETs) has been developed by Cornell University researchers. It involves the passivation of GaN HFETs by applying a layer of Aluminum Nitride (AlN) to their surface. This method raises the microwave power output by a factor of nearly two, with minimal effects on other GaN transistor properties. This improvement in output power occurs without the introduction of undesirable tradeoffs.
- *Licensing
- Patrick Govangpjg26@cornell.edu (607) 254-2330
- Country/Region
- USA
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