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Gas Sensor

Countries
United States
Application No.
US8283704
*Abstract

Provided is a gas sensor of simple structure, having a self-diagnostic function. A gas sensor(30) consisting of two field effect transistors, in which gate electrodes are provided onrespective gate insulating films (24) of the two field effect transistor, fordetecting gas by the gate electrodes. The gas sensor (30) comprises a firstgate electrode (5) provided in one of the two field effect transistors, asecond gate electrode (6) provided in the other field effect transistor, and a voltage application means for applying the same potential or, direct-current voltages having a constant voltage difference therebetween oralternating-current voltages having a constant voltage difference therebetweenacross the first gate electrode (5) and the second gate electrode (6) which  are connected to each other by wiring. Thefirst gate electrode(5) and second gate electrode(6) are formed of differentmeterials. The two field effect transistors have the same structure.

*IP Issue Date
None
*IP Type
Utility
Country/Region
USA

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