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Enhancing Growth of Semipolar (Al,In,Ga,B)N Films via MOCVD

Technology Benefits

Large available surface area (samples grown on 2-inch diameter substrates, compared to areas on the order of a few micrometers achieved by prior art) Increased device efficiencies compared to c-plane devices Planar film surface Minimized surface undulations and crystallographic defects

Technology Application

High-Performance Nitride-Based Optoelectronics and Semiconductor Devices  This technology is available for licensing. See below for a selection of the patents and patent applications related to this invention. Please inquire for full patent portfolio status.

Detailed Technology Description

Researchers at the University of California, Santa Barbara have developed a method for enhancing growth of semipolar (Al,In,Ga,B)N films via metalorganic chemical vapor deposition (MOCVD). This method involves growth of nitride films on the semipolar {11 22} plane to overcome performance limitations associated with the polar c-plane, thus increasing device efficiencies. It yields samples grown on 2-inch diameter substrates, compared with areas of a few micrometers accomplished using existing methods. This method also results in a planar film surface, few surface undulations, and a reduced number of crystallographic defects, all necessary features to support application to state-of-the-art nitride semipolar electronic devices.

Supplementary Information

Patent Number: US7687293B2
Application Number: US2007655572A
Inventor: Sato, Hiroshi | Kaeding, John F. | Iza, Michael | Baker, Troy J. | Haskell, Benjamin A. | DenBaars, Steven P. | Nakamura, Shuji
Priority Date: 20 Jan 2006
Priority Number: US7687293B2
Application Date: 19 Jan 2007
Publication Date: 30 Mar 2010
IPC Current: H01L002100 | H01L002900
US Class: 438046 | 257012 | 257013 | 257079 | 257086 | 257094 | 257E21113 | 257E21121 | 257E21463 | 438041 | 438048 | 438481 | 438485
Assignee Applicant: The Regents of the University of California
Title: Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
Usefulness: Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
Summary: For growing device-quality planar semipolar nitride semiconductor thin films to form nitride semipolar electronic devices (claimed) e.g. semipolar LEDs.
Novelty: Enhancing growth of device-quality planar semipolar nitride semiconductor thin film involves depositing semipolar nitride semiconductor thin film on nucleation/buffer layer of mixed nitrides of aluminum, indium or gallium containing indium

Industry

Electronics

Sub Category

Semiconductor

Application No.

7687293

Others

Background

Existing methods of producing semipolar nitride films are extremely cumbersome and yield areas too small for device fabrication, thus there is a need for a new method that overcomes these obstacles in order to take advantage of the performance benefits of using semipolar nitride films.

Additional Technologies by these Inventors

• Reduced Dislocation Density of Non-Polar GaN Grown by Hydride Vapor Phase Epitaxy
• Growth of Planar, Non-Polar, A-Plane GaN by Hydride Vapor Phase Epitaxy
• Nonpolar (Al, B, In, Ga)N Quantum Well Design
• Improved Manufacturing of Semiconductor Lasers
• Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN
• Etching Technique for the Fabrication of Thin (Al, In, Ga)N Layers
• GaN-Based Thermoelectric Device for Micro-Power Generation
• Growth of High-Quality, Thick, Non-Polar M-Plane GaN Films
• Method for Growing High-Quality Group III-Nitride Crystals
• Growth of Planar Semi-Polar Gallium Nitride
• Defect Reduction of Non-Polar and Semi-Polar III-Nitrides
• MOCVD Growth of Planar Non-Polar M-Plane Gallium Nitride
• Lateral Growth Method for Defect Reduction of Semipolar Nitride Films
• Low Temperature Deposition of Magnesium Doped Nitride Films
• Growth of Polyhedron-Shaped Gallium Nitride Bulk Crystals
• Improved Manufacturing of Solid State Lasers via Patterning of Photonic Crystals
• Control of Photoelectrochemical (PEC) Etching by Modification of the Local Electrochemical Potential of the Semiconductor Structure
• Phosphor-Free White Light Source
• Single or Multi-Color High Efficiency LED by Growth Over a Patterned Substrate
• High Efficiency LED with Optimized Photonic Crystal Extractor
• Packaging Technique for the Fabrication of Polarized Light Emitting Diodes
• LED Device Structures with Minimized Light Re-Absorption
• (In,Ga,Al)N Optoelectronic Devices with Thicker Active Layers for Improved Performance
• Oxyfluoride Phosphors for Use in White Light LEDs
• III-V Nitride Device Structures on Patterned Substrates
• Growth of Semipolar III-V Nitride Films with Lower Defect Density
• Improved GaN Substrates Prepared with Ammonothermal Growth
• Enhanced Optical Polarization of Nitride LEDs by Increased Indium Incorporation
• Semipolar-Based Yellow, Green, Blue LEDs with Improved Performance
• Hexagonal Wurtzite Type Epitaxial Layer with a Low Alkali-Metal Concentration
• Photoelectrochemical Etching Of P-Type Semiconductor Heterostructures
• Highly Efficient Blue-Violet III-Nitride Semipolar Laser Diodes
• Method for Manufacturing Improved III-Nitride LEDs and Laser Diodes: Monolithic Integration of Optically Pumped and Electrically Injected III-Nitride LEDs
• Defect Reduction in GaN films using in-situ SiNx Nanomask
• Semi-polar LED/LD Devices on Relaxed Template with Misfit Dislocation at Hetero-interface
• Limiting Strain-Relaxation in III-Nitride Heterostructures by Substrate Patterning
• Suppression of Defect Formation and Increase in Critical Thickness by Silicon Doping
• High Efficiency Semipolar AlGaN-Cladding-Free Laser Diodes
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-183)
• Low-Cost Zinc Oxide for High-Power-Output, GaN-Based LEDs (UC Case 2010-150)
• Nonpolar III-Nitride LEDs With Long Wavelength Emission
• Method for Increasing GaN Substrate Area in Nitride Devices
• Flexible Arrays of MicroLEDs using the Photoelectrochemical (PEC) Liftoff Technique
• Optimization of Laser Bar Orientation for Nonpolar Laser Diodes
• UV Optoelectronic Devices Based on Nonpolar and Semi-polar AlInN and AlInGaN Alloys
• Low-Droop LED Structure on GaN Semi-polar Substrates
• Improved Fabrication of Nonpolar InGaN Thin Films, Heterostructures, and Devices
• Growth of High-Performance M-plane GaN Optical Devices
• Method for Enhancing Growth of Semipolar Nitride Devices
• Transparent Mirrorless (TML) LEDs
• Solid Solution Phosphors for Use in Solid State White Lighting Applications
• Technique for the Nitride Growth of Semipolar Thin Films, Heterostructures, and Semiconductor Devices
• Planar, Nonpolar M-Plane III-Nitride Films Grown on Miscut Substrates
• High-Efficiency, Mirrorless Non-Polar and Semi-Polar Light Emitting Devices
• High Light Extraction Efficiency III-Nitride LED
• Tunable White Light Based on Polarization-Sensitive LEDs
• Method for Improved Surface of (Ga,Al,In,B)N Films on Nonpolar or Semipolar Subtrates
• Improved Anisotropic Strain Control in Semipolar Nitride Devices
• III-Nitride Tunnel Junction with Modified Interface
• Enhanced Light Extraction LED with a Tunnel Junction Contact Wafer Bonded to a Conductive Oxide
• Increased Light Extraction with Multistep Deposition of ZnO on GaN
• Hybrid Growth Method for Improved III-Nitride Tunnel Junction Devices
• Contact Architectures for Tunnel Junction Devices
• New Blue Phosphor for High Heat Applications
• Internal Heating for Ammonothermal Growth of Group-III Nitride Crystals
• Methods for Fabricating III-Nitride Tunnel Junction Devices
• Multifaceted III-Nitride Surface-Emitting Laser
• Laser Diode System For Horticultural Lighting
• Fabricating Nitride Layers
• Reduction in Leakage Current and Increase in Efficiency of III-Nitride MicroLEDS
• Vertical Cavity Surface-Emitting Lasers with Continuous Wave Operation
• Laser Lighting System Incorporating an Additional Scattered Laser

Tech ID/UC Case

21821/2006-178-0

Related Cases

2006-178-0

*Abstract

A method for enhancing growth of semipolar (Al,In,Ga,B)N films for high-performance nitride-based optoelectronics and semiconductor devices.

*IP Issue Date

Mar 30, 2010

*Principal Investigator

Name: Troy Baker

Department:

Name: Steven DenBaars

Department:

Name: Benjamin Haskell

Department:

Name: Michael Iza

Department:

Name: John Kaeding

Department:

Name: Shuji Nakamura

Department:

Name: Hitoshi Sato

Department:

Country/Region

USA