High device-to-device uniformity in thin film transistors
- Summary
- Thin film transistors are important components of advanced technological consumer products such as LCD displays. Thin film transistors need to have high device-to-device uniformity to ensure optimal functionality. This is increasingly challenging in low-temperature polycrystalline silicon processes because the inherent randomness of grain boundaries contributes to troublesome off-current. This technology provides a solution to this problem by proposing an alternative alignment of the microstructure relative to the channel region. With some control in patterning, this may decrease the spread in the number of perpendicular grain boundaries. The end result is large device-to-device uniformity and improved performance.
- Technology Benefits
- Simple procedureImproved device-to-device uniformityImproved performancePatent Information:Patent Issued (US 7,160,163)Tech Ventures Reference: IR M02-012
- Technology Application
- Low temperature polycrystalline silicon processesThin film transistorsLiquid crystal displays
- Detailed Technology Description
- None
- *Abstract
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None
- *Inquiry
- Jim AloiseColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu
- *IR
- M02-012
- *Principal Investigator
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- *Web Links
- Patent number: WO03018882
- Country/Region
- USA
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