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Laser crystallization process for generating uniform grain orientations in thin films

Summary
James Im, Ph.D.
Technology Benefits
Increases electron mobility in thin films compared to conventional approachesCompatible with both semiconductor and metal filmsProvides well defined crystallographic orientationPatent Information:Patent Issued (US 8734584)Tech Ventures Reference: IR M05-003
Technology Application
Flat panel displaysImage sensorsThin film transistors
Detailed Technology Description
James Im, Ph.D.
*Abstract
None
*Inquiry
Jim AloiseColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu
*IR
M05-003
*Principal Investigator
*Publications
van der Wilt P, Kane M, Limanov A, Firester A, Goodman L, Lee J, Abelson J, Chitu A, Im J. "Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates" MRS Bulletin. 2006 Jun;31(6):461-465.
*Web Links
Patent number: US20060102901USPTO: US20060102901A1
Country/Region
USA

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