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A discrete-time MOSFET parametric amplifier which has various electronic applications

Summary: Yannis Tsividis, Ph.D.

Technology Benefits: Very low noise and very low power dissipation.Patent information:Patent Issued (WO/2004/051550Tech Ventures Reference: IR M03-002

Technology Application: A variety of circuits, ranging from low frequencies to radio frequencies.

Detailed Technology Description: Yannis Tsividis, Ph.D.Sanjeev Ranganathan

*Abstract: None

*Inquiry: Teresa FazioColumbia Technology VenturesTel: (212) 854-8444Email: TechTransfer@columbia.edu

*IR: M03-002

*Principal Investigator

*Publications: Y Tsividis, K Suyama. “Strange ways to use the MOSFET”. Circuits and Systems, 1997. ISCAS’97S. Ranganathan and Y. Tsividis. “Discrete-time parametric amplification based on a three-terminal MOS varactor: Analysis and experimental results”. IEEE Journal of Solid-State Circuits, Vol. 38, No. 12, pp. 2087-2093, December 2003.

*Web Links: Patent number: US20050275026WIPO: WO/2004/051550

Country/Region: USA

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