III-nitride compound semiconductors have the merits of wide band gap, high breakdown field, and large thermal conductivity, which results in well designed AlGaN/GaN heterojunction field-effect transistors. This transistor is capable of high temperature operation, suitable for high temperature integr.....
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With the development of microelectronic systems, significant challenge of thermal management has to be faced to meet the increasing requirements such as smaller profile, higher performance and longer product lifetime. Conventional thermal interface materials, such as thermal grease, thermal adhesive.....
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This invention is about three new measuring methods to determine the twist angle and retardation value of any twisted nematic liquid crystal cell. Twist angle of the liquid crystal alignment and the retardation value are important design parameters in determining the optical performance of liquid c.....
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The invention relates to field of devices and preparations of highly ordered organic molecular layers both on flexible and rigid substrates. In particular, the invention discloses the photo-chemically stable dichroic dye molecules and the device structures, which are suitable for the fabrication of .....
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This invention provides for a method and process for simultaneously producing two highly pure fullerenes from mixed fullerenes that mainly contains the two components, wherein the solid-liquid phase equilibrium behavior of certain process streams are manipulated such that pure fullerenes, solid solu.....
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