None
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Low-cost, high-volume production is possible Large-area devices can be fabricated easily Thin, flexible, and/or conformable devices are possible High solar energy conversion efficiency
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Not limited by wafer crystallographic orientationNot limited to Si homoepitaxy (can be used on other semiconductor materials)Starting materials can be reused, saving upfront costs
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Reduced strain on device layersReduced thread and misfit dislocationsHigh thickness/composition group-III nitride stackingReduced complications of lattice mismatchImproved device performance
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