Researchers at Purdue University have developed a method to grow uniform vertical CNTs to form the basis of three-terminal electrical devices, allowing planar CNT growth over trenches for surrounding dielectric materials and gate metal deposition. This method uses insulating templates of user-define.....
[更多]
COPYRIGHT (C) 1978, 1979 REGENTS OF THE UNIVERSITY OF CALIFORNIA All Rights Reserved UCSD Pascal versions authored solely by UC authors prior to June 1, 1979 may be licensed under the Creative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported License (http://creativecommons.org/licenses/b.....
[更多]
|< <- | [6527] [6528] [6529] [6530] [6531] [6532] [6533] [6534] [6535] [6536] [6537] | -> >| |