Main Advantages of this InventionΓÇó Fast data acquisition time.ΓÇó Provides a non-destructive means of measuring the lifetime of a variety of materialsΓÇó Performance exceeds those of current methodsΓÇó Has a greater range of applicability than the current method
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Reduces light reflections Increased light extraction efficiency
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Allows for the production of thick a-plane GaN films for use as substrates for polarization-free device growth; Produces films of superior quality that are suitable for subsequent device regrowth by a variety of growth techniques.
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